Press Release


April 16, 2004

Voltaix Continues to Contribute to the Development of Strained Silicon and Silicon Germanium Technologies

North Branch, NJ - Voltaix, www.voltaix.com, a leading manufacturer of chemicals and gases for the semiconductor and photovoltaics industries, continues its commitment to develop leading-edge solutions for the next generation of semiconductor devices.

As a Certified Manufacturer of Silcore®, a key component of the ASM New Technology®, Voltaix has expanded its manufacturing facilities for this key new product that offers an unprecedented ease in control of SiGe or SiGe:C layer composition, greater uniformity of Si, SiGe and SiN layers and deposition of very thin, smooth films on all surfaces of importance in semiconductor devices. These properties have resulted in a genuine breakthrough in device manufacturing technology.

Voltaix is the world leader in the manufacture and supply of germane, trisilane and monomethylsilane, which have become key molecules for high mobility layer growth applications. To enhance the understanding of the end-use applications of these molecules in state-of-the-art devices, Voltaix has also entered into a working relationship with IMEC, a world leader in semiconductor research.

Commenting on the announcement, Michael A. Pikulin, Sr. Vice President of Voltaix, said, “Voltaix has a long history of success in the development and supply of new molecules for the semiconductor and photovoltaic device markets. Our relationships with ASM, IMEC and other leading researchers underscores our commitment to become more directly involved with the end-use applications of our products and to develop the products needed to meet tomorrow’s needs.”

Further information about Voltaix is available at www.voltaix.com.

Voltaix is recognized worldwide for manufacturing high purity specialty gases and chemicals for emerging applications primarily related to electronic and photonic devices. Voltaix gas products, chemicals and gas mixtures are used in ion implantation and chemical vapor deposition for depositing and/or doping various crystalline, polycrystalline, microcrystalline and amorphous semiconducting and dielectric films in advanced semiconductor and photonics devices. Its products include germane, diborane, silane, disilane, silicon tetrafluoride, boron trifluoride and trimethylboron.
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Justine Falk at:
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